Insight Product Company offers  Microwave Switching Diodes with switching time up to 3 nsec and operating in frequency range from 1 to 40 GHz.  The p+ -n - n+ silicon spackage-less switching diodes are designed to be used in microwave switching devices, phase changers, modulators, microwave attenuators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.

The package-less gold-beam-lead diode is protected with a high-temperature silicon compound.

Performance:
 
 

Total diode capacitance (at reverse voltage 10V), pF*	0.03 - 0.20
Forward loss resistance (at  forward current 10mA), Ohm	0.7-3.0
Forward voltage (at forward current 10mA), V	<=0.9
Switching time, nsec*	3-50
Diode lead inductance, nH	<=0.15
Operating frequency, GHz	1-40

* The required total diode capacitance and switching time should be indicated when placing an order

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